Ballistic hot electron transport in graphene

Towards Ballistic Transport in Graphene

Graphene is a fascinating material for exploring fundamental science questions as well as a potential building block for novel electronic applications. In order to realize the full potential of this material the fabrication techniques of graphene devices, still in their infancy, need to be refined to better isolate the graphene layer from the environment. We present results from a study on the ...

Electron Interference in Ballistic Graphene Nanoconstrictions.

We realize nanometer size constrictions in ballistic graphene nanoribbons grown on sidewalls of SiC mesa structures. The high quality of our devices allows the observation of a number of electronic quantum interference phenomena. The transmissions of Fabry-Perot-like resonances are probed by in situ transport measurements at various temperatures. The energies of the resonances are determined by...

Graphene Hot-electron Transistors

Ballistic versus diffusive transport in graphene

Mario F. Borunda,1,2,* H. Hennig,2 and Eric J. Heller2,3 1Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078, USA 2Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA 3Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, USA (Received 9 April 2013; revised manuscript received 9 August 2013; publish...

Approaching ballistic transport in suspended graphene.

The discovery of graphene raises the prospect of a new class of nanoelectronic devices based on the extraordinary physical properties of this one-atom-thick layer of carbon. Unlike two-dimensional electron layers in semiconductors, where the charge carriers become immobile at low densities, the carrier mobility in graphene can remain high, even when their density vanishes at the Dirac point. Ho...